The DDR I/O pins are located on bank 504 and can have a 16-bit, 32-bit or 64-bit data path to the DRAMs depending on the device type. Bytes 0 to 1 correspond to 16-bit data, bytes 0 to 3 correspond to 32-bit data, and bytes 0 to 7 correspond to 64-bit data. Byte 8 refers to the ECC bits. The pins are summarized in Table: DDR Pins. See Zynq UltraScale+ MPSoC Packaging and Pinout User Guide (UG1075) [Ref 7] for pin assignments. The pin swap guidelines are described in Answer Record 67330. See UltraScale Architecture PCB Design User Guide (UG583)[Ref 15] for clamshell functionality.
Table 17-3: DDR Pins
Pin Name
|
Direction
|
Description
|
PS_DDR_DQ
|
Input/Output
|
DRAM data.
|
PS_DDR_DQS_P
|
Input/Output
|
DRAM differential data strobe positive.
|
PS_DDR_DQS_N
|
Input/Output
|
DRAM differential data strobe negative.
|
PS_DDR_ALERT_N
|
Input
|
DRAM alert signal.
|
PS_DDR_ACT_N
|
Output
|
DRAM activation command.
|
PS_DDR_A
|
Output
|
DRAM row and column address.
|
PS_DDR_BA
|
Output
|
DRAM bank address.
|
PS_DDR_BG
|
Output
|
DRAM bank group.
|
PS_DDR_CK_N
|
Output
|
DRAM differential clock negative.
|
PS_DDR_CK
|
Output
|
DRAM differential clock positive.
|
PS_DDR_CKE
|
Output
|
DRAM clock enable.
|
PS_DDR_CS
|
Output
|
DRAM chip select.
|
PS_DDR_DM
|
Output
|
DRAM data mask.
|
PS_DDR_ODT
|
Output
|
DRAM termination control.
|
PS_DDR_PARITY
|
Output
|
DRAM parity signal.
|
PS_DDR_RAM_RST_N
|
Output
|
DRAM reset signal, active Low.
|
PS_DDR_ZQ
|
Input/Output
|
ZQ calibration signal.
|