Symbol | Description | Min | Typ 1 | Max | Units |
---|---|---|---|---|---|
CIN 2 | HDIO and PSIO die input capacitance at the pad | – | – | 3.50 | pF |
XPIO die input capacitance at the pad | – | – | 1.75 | pF | |
IL |
For XC devices, HDIO, XPIO, and PSIO input or output leakage current per pin (sample-tested) |
– | – | 15 | µA |
For XA devices, HDIO, XPIO, and PSIO input or output leakage current per pin (sample-tested) |
– | – | 20 | µA | |
IRPU | Pad pull-up (when selected) at VIN = 0V, VCCO = 3.3V | 60 | – | 200 | µA |
Pad pull-up (when selected) at VIN = 0V, VCCO = 2.5V | 50 | – | 169 | µA | |
Pad pull-up (when selected) at VIN = 0V, VCCO = 1.8V | 29 | – | 120 | µA | |
Pad pull-up (when selected) at VIN = 0V, VCCO = 1.5V | 30 | – | 120 | µA | |
Pad pull-up (when selected) at VIN = 0V, VCCO = 1.2V | 10 | – | 100 | µA | |
IRPD | Pad pull-down (when selected) at VIN = 3.3V | 60 | – | 200 | µA |
Pad pull-down (when selected) at VIN = 1.8V | 29 | – | 120 | µA | |
ICC_FUSE | VCC_FUSE supply current during eFUSE programming | – | – | 165 | mA |
Battery Supply Current | |||||
ICC_BATT 3, 4 | Battery supply current at VCC_BATT = 1.20V, RTC disabled | – | – | 160 | nA |
Battery supply current at VCC_BATT = 1.50V, RTC disabled | – | – | 320 | nA | |
Battery supply current at VCC_BATT = 1.20V, RTC enabled | – | – | 1360 | nA | |
Battery supply current at VCC_BATT = 1.50V, RTC enabled | – | – | 1930 | nA | |
Calibrated programmable on-die termination (DCI) in XPIO banks 5 (measured per JEDEC specification) | |||||
R 7 | Thevenin equivalent resistance of programmable input termination where x = target impedance of 40, 48, 60, 120, or 240 | –20% 6 | ODT = RTT_x | +20% 6 | Ω |
Uncalibrated programmable on-die termination in HDIO banks (measured per JEDEC specification) | |||||
R 7 | Thevenin equivalent resistance of programmable input termination to VCCO/2 where ODT = RTT_48 | –50% | 48 | +50% | Ω |
Differential termination | Programmable differential termination (TERM_100) for XPIO banks | –35% | 100 | +35% | Ω |
|