Recommended Operating Conditions

Table 1. Recommended Operating Conditions
Symbol	Description^{1, 2}	Min	Typ	Max	Units
FPGA Logic
V_CCINT	Internal supply voltage	0.825	0.850	0.876	V
	For -2LE (V_CCINT = 0.72V) devices: internal supply voltage	0.698	0.720	0.742	V
	For -3E devices: internal supply voltage	0.873	0.900	0.927	V
V_{CCINT_IO} ³	Internal supply voltage for the I/O banks	0.825	0.850	0.876	V
	For -2LE (V_CCINT = 0.72V) devices: internal supply voltage for the I/O banks	0.825	0.850	0.876	V
	For -3E devices: internal supply voltage for the I/O banks	0.873	0.900	0.927	V
V_CCBRAM	Block RAM and UltraRAM supply voltage	0.825	0.850	0.876	V
V_CCBRAM	For -3E devices: block RAM and UltraRAM supply voltage	0.873	0.900	0.927	V
V_CCAUX	Auxiliary supply voltage	1.746	1.800	1.854	V
V_CCO ⁴	Supply voltage for HD I/O banks (VU19P and VU23P only) ⁵	1.140	–	3.400	V
V_CCO ⁴	Supply voltage for HP I/O banks and configuration bank 0 ⁶	0.950	–	1.900	V
V_{CCAUX_IO} ⁷	Auxiliary I/O supply voltage	1.746	1.800	1.854	V
V_IN ^{8, 9}	I/O input voltage	–0.200	–	V_CCO + 0.200	V
I_IN ¹⁰	Maximum current through any pin in a powered or unpowered bank when forward biasing the clamp diode	–	–	10	mA
V_BATT ¹¹	Battery voltage	1.000	–	1.890	V
High Bandwidth Memory
V_{CC_HBM}	Supply voltage for the high-bandwidth memory (HBM)	1.164	1.200	1.236	V
V_{CC_IO_HBM}	I/O supply voltage for the high-bandwidth memory	1.164	1.200	1.236	V
V_{CCAUX_HBM}	Auxiliary supply voltage for the high-bandwidth memory	2.425	2.500	2.575	V
GTY or GTM Transceiver
V_{CCINT_GT}	Digital supply voltage for select modules in the GTM transceivers	0.825	0.850	0.876	V
V_{CCINT_GT}	For -3E devices: Digital supply voltage for select modules in the GTM transceivers supply voltage	0.873	0.900	0.927	V
V_MGTAVCC ¹²	Analog supply voltage for the GTY or GTM transceiver	0.873	0.900	0.927	V
V_MGTAVTT ¹²	Analog supply voltage for the GTY or GTM transmitter and receiver termination circuits	1.164	1.200	1.236	V
V_MGTVCCAUX ¹²	Auxiliary analog QPLL voltage supply for the transceivers	1.746	1.800	1.854	V
V_MGTAVTTRCAL ¹²	Analog supply voltage for the resistor calibration circuit of the GTY or GTM transceiver column	1.164	1.200	1.236	V
System Monitor
V_CCADC	System Monitor supply relative to GNDADC	1.746	1.800	1.854	V
V_REFP	System Monitor externally supplied reference voltage relative to GNDADC	1.200	1.250	1.300	V
Temperature
T_j ¹³	Junction temperature operating range for XCVU31P, XCVU33P, XCVU35P, and XCVU37P, XCVU45P, XCVU47P, XCVU57P extended (E) temperature devices^{14, 15, 16}	0	–	100	°C
	Junction temperature operating range for all other extended (E) temperature devices¹⁴	0	–	100	°C
	Junction temperature operating range for industrial (I) temperature devices	–40	–	100	°C
	Junction temperature operating range for eFUSE programming¹⁷	–40	–	125	°C
All voltages are relative to GND, assuming supplies are present. For the design of the power distribution system consult the UltraScale Architecture PCB Design User Guide (UG583). V_{CCINT_IO} must be connected to V_CCBRAM. For V_{CCO_0}, the recommended nominal operating voltage is 1.5V or 1.8V, and the minimum voltage for power on and during configuration is 1.425V. After configuration, data is retained even if V_CCO drops to 0V. Includes V_CCO of 1.2V, 1.35V, 1.5V, 1.8V, and 2.5V at ±5%, and 3.3V at +3/–5%. Includes V_CCO of 1.0V, 1.2V, 1.35V, 1.5V, and 1.8V at ±5%. V_{CCAUX_IO} must be connected to V_CCAUX. The lower absolute voltage specification always applies. V_IN for the POR_OVERRIDE pin is unique. POR_OVERRIDE must be connected to either GND (default) or V_CCINT. See T_POR in Configuration Switching Characteristics for additional information. A total of 200 mA per bank should not be exceeded. If battery is not used, connect V_BATT to either GND or V_CCAUX. Each voltage listed requires filtering as described in the UltraScale Architecture GTY Transceivers User Guide (UG578) or the Virtex UltraScale+ FPGAs GTM Transceivers User Guide (UG581) . AMD recommends measuring the T_j of a device using the system monitor as described in the UltraScale Architecture System Monitor User Guide (UG580). The system monitor temperature measurement errors (that are described in Table 1) must be accounted for in your design. For example, when using the system monitor with an external reference of 1.25V, and when the system monitor reports 97°C, there is a measurement error ±3°C. A reading of 97°C is considered the maximum adjusted T_j (100°C – 3°C = 97°C). Devices labeled with the speed/temperature grade of -2LE can operate for a limited time at a junction temperature between 100°C and 110°C. Timing parameters adhere to the same speed file at 110°C as they do below 110°C, regardless of operating voltage (nominal voltage of 0.85V or a low-voltage of 0.72V). Operation up to T_j = 110°C is limited to 1% of the device lifetime and can occur sequentially or at regular intervals as long as the total time does not exceed 1% of the device lifetime. The recommended maximum operating temperature for high-bandwidth memory is 95°C. Devices with HBM and labeled with the speed/temperature grade of -2LE can operate for a limited time at a junction temperature between 95°C and 105°C. HBM operation up to T_j = 105°C is limited to 4.1% of the device lifetime and can occur sequentially or at regular intervals as long as the total time does not exceed 4.1% of the device lifetime, and for no longer than 96 hours at a time. While operating the HBM above 95°C, the refresh rate must be at least 4x the refresh rate at 95°C. Do not program eFUSE during device configuration (e.g., during configuration, during configuration readback, or when readback CRC is active).