AIE-ML v2 Memory Tile Memory - AIE-ML v2 Memory Tile Memory - AM027

Versal Adaptive SoC AIE-ML v2 Architecture Manual (AM027)

Document ID
AM027
Release Date
2025-10-23
Revision
1.1 English

Each memory tile has 512 KB of memory formed from eight banks of 64 KB. Each bank is 256-bit wide and 2K words deep. Each bank can be accessed by ten read and ten write interfaces.

The memory tile read interfaces are:

  • AXI4 read (including control packets)
  • One MM2S interface from the MM2S channels in the neighboring memory tile to the left
  • 6x local MM2S channels [0 – 5]
  • One MM2S interface from the MM2S channels in the neighboring memory tile to the right
  • ECC scrubber
Figure 1. Memory Tile Memory Read Interfaces

The memory tile write interfaces are:

  • AXI4 write (including control packets)
  • One MM2S interface from the MM2S channels in the neighboring memory tile to the left
  • 6x local S2MM channels [0 – 5]
  • One MM2S interface from the MM2S channels in the neighboring memory tile to the right
  • ECC scrubber/zeroization
Figure 2. Memory Tile Memory Write Interfaces

DMA S2MM channels (0 – 3) and MM2S channels (0 – 3) can access the local memory banks and the memory banks of the Memory-tile to the east and the west. The memory in memory tile supports bank interleaving. Interleaving is done at 256-bit granularity, such that sequential 256-bit accesses map to different banks and wrap around after the eight banks (every 256B). The memory tile banks have ECC protection and ECC scrubbing.